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PD -96276
IRFH5301PbF
HEXFET(R) Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
30 1.85 37 1.5 100h
V m nC A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25C)
Applications
* OR-ing MOSFET for 12V (typical) Bus in-Rush Current * Synchronous MOSFET for Buck Converters * Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features Benefits
Low RDSon (<1.85m) Low Thermal Resistance to PCB (<1.1C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Orderable part number IRFH5301TRPBF IRFH5301TR2PBF
Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400
Note
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC(Bottom) = 25C ID @ TC(Bottom) = 100C IDM PD @TA = 25C PD @TC(Bottom) = 25C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
Max.
30 20 35 28 100h 100h 400 3.6 110 0.029 -55 to + 150
Units
V
A
g g
c
W W/C C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Notes through are on page 8
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1
11/18/09
IRFH5301PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current
Min.
30 --- --- --- 1.35 --- --- --- --- --- 218 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ.
--- 0.02 1.55 2.4 1.80 -6.9 --- --- --- --- --- 77 37 9.8 5 12 10 17 22 1.5 21 78 22 23 5114 1017 406
Max. Units
--- --- 1.85 2.9 2.35 --- 5.0 150 100 -100 --- --- 56 --- --- --- --- --- --- 2.3 --- --- --- --- --- --- --- Typ. --- --- pF nC ns
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 50A VGS = 4.5V, ID = 50A
V VDS = VGS, ID = 100A mV/C A nA S nC VDS = 24V, VGS = 0V
e e
VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 50A VGS = 10V, VDS = 15V, ID = 50A VDS = 15V VGS = 4.5V ID = 50A See Fig.6,17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 15A RG=1.0 See Fig.15 VGS = 0V VDS = 15V = 1.0MHz Max. 150 50 Units mJ A
nC
Avalanche Characteristics
EAS IAR
d
Min.
--- --- --- --- ---
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Typ.
--- --- --- 24 53
Max. Units
100 A 400 1.0 36 80 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 50A, VGS = 0V TJ = 25C, IF = 50A, VDD = 15V di/dt = 300A/s
e
eA
Time is dominated by parasitic Inductance
Thermal Resistance
RJC (Bottom) RJC (Top) RJA RJA (<10s) Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient
f f
g g
Typ. --- --- --- ---
Max. 1.1 15 35 22
Units C/W
2
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IRFH5301PbF
1000
TOP VGS 10V 4.50V 4.00V 3.50V 3.25V 3.00V 2.75V 2.50V
1000
TOP VGS 10V 4.50V 4.00V 3.50V 3.25V 3.00V 2.75V 2.50V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
60s PULSE WIDTH
0.1 0.1 1 Tj = 25C
60s PULSE WIDTH
Tj = 150C 1
100
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
Fig 2. Typical Output Characteristics
1.8 ID = 50A 1.6 1.4 1.2 1.0 0.8 0.6 VGS = 10V
ID, Drain-to-Source Current (A)
100 T J = 150C 10 T J = 25C 1 VDS = 15V 60s PULSE WIDTH 0.1 1.5 2 2.5 3 3.5 4 4.5 5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 4. Normalized On-Resistance Vs. Temperature
14 ID= 50A
VGS, Gate-to-Source Voltage (V)
12 10 8 6 4 2 0
VDS= 24V VDS= 15V
C, Capacitance (pF)
10000 Ciss
1000
Coss Crss
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
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IRFH5301PbF
1000
10000
OPERATION IN THIS AREA LIMITED BY R (on) DS
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
T J = 150C
1000 100sec
100
10
T J = 25C
10
1msec
1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
1
Tc = 25C Tj = 150C Single Pulse 0.10 1
10msec
0.1 10 100 VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
200
Fig 8. Maximum Safe Operating Area
3.0
VGS(th), Gate threshold Voltage (V)
Limited By Package 160
ID, Drain Current (A)
2.5
120
2.0
80
1.5 ID = 1.0A ID = 1.0mA ID = 250A ID = 100A -75 -50 -25 0 25 50 75 100 125 150
40
1.0
0 25 50 75 100 125 150 T C , Case Temperature (C)
0.5 TJ , Temperature ( C )
Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) C/W
Fig 10. Threshold Voltage Vs. Temperature
1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1
0.01
0.001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH5301PbF
RDS(on), Drain-to -Source On Resistance (m )
6
700
EAS , Single Pulse Avalanche Energy (mJ)
ID = 50A
5 4 3
600 500 400 300 200 100 0
ID TOP 9.69A 18.4A BOTTOM 50A
T J = 125C 2 1 0 2 4 6 8 10 12 14 16 18 20
TJ = 25C
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS tp
+ V - DD
A
I AS
0.01
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
VDS VGS RG V10V GS
Pulse Width 1 s Duty Factor 0.1
RD
90%
D.U.T.
+
VDS
-VDD
10%
VGS
td(on) tr td(off) tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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IRFH5301PbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Vds Vgs
Id
L
0
DUT 1K
S
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 17. Gate Charge Test Circuit
Fig 18. Gate Charge Waveform
6
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IRFH5301PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL RECTIFIER LOGO
DATE CODE ASSEMBLY SITE CODE
(Per SCOP 200-002)
PIN 1 IDENTIFIER
XXXX XYWWX XXXXX
PART NUMBER
("4 or 5 digits")
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFH5301PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information
Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D47F PQFN 5mm x 6mm Yes

guidelines ) MS L1
(per JE DE C J-S T D-020D
)

Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.119mH, RG = 25, IAS = 50A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/2009
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